Modern Electronic Materials

Pensoft Publishers

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About the journal

Modern Electronic Materials is an open-access journal published by Pensoft Publishers in Russia, publishing in english. It is listed in DOAJ according to the sources read. Declared review time at DOAJ: 12 weeks. Facts are reproduced as recorded at their sources with their capture dates; PublishLens indicators are available after sign-in.

Basic facts

Publisher
Pensoft Publishers
ISSN
2452-2449 · 2452-1779
Country
Russia
Languages
english
Access
Open access
Articles in DOAJ
269
Declared review time
12 weeks
Declared peer-review model
peer_review

Index listings

  • DOAJ · 2020-02-27
Indexing
DOAJ
APC
—
Declared review time (DOAJ)
12 weeks — journal-declared only (not measured)
Activity (OpenAlex)
Active — latest works 2026
PublishLens list status
Shown after sign-in
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Methodology signals (dated facts from their sources)

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Journal profile

Descriptive metadata from public sources (DOAJ, OpenAlex, PubMed) as of the capture date shown — contains no assessment or judgment.

Articles in DOAJ

269

Most recent article

3 months ago

Average review time (journal-declared via DOAJ)

12weeks

Works in OpenAlex

283

Last recorded publication year

2025

Reported by OpenAlex in 2 of 3 sources (CC0 flags, not verified indexing)DOAJSciELOOpenAlex Core

h-index

14

i10-index

27

From OpenAlex open data (CC0).

Editorial & policy11
Last DOAJ review date
2023-07-05
Added to DOAJ
2020-02-27
Declared plagiarism screening
Not declared
Other fees beyond APC
No
Declared digital preservation
Portico
Observed digital preservation (Keepers registry)— snapshot 2026-10-05
CLOCKSSPortico
Editorial board
Official page ↗
Open references deposited at Crossref
100%
ORCID iDs in current deposits
83%
Enrolled in Crossref Similarity Check
✓
Deposits licence metadata at Crossref
✓
Peer-review policy
View policy
Identity & continuity1
Source type
journal
Classification2

Subjects (DOAJ)

Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics

LCC codes

TK7800-8360

Subject areas

  • Ferroelectric and Piezoelectric Materials
  • Ferroelectric and Piezoelectric Materials
  • Silicon and Solar Cell Technologies
  • Silicon and Solar Cell Technologies
  • Semiconductor materials and interfaces
  • Semiconductor materials and interfaces
  • Multiferroics and related materials
  • Multiferroics and related materials
Show all subjects (50)
  • Silicon Nanostructures and Photoluminescence
  • Silicon Nanostructures and Photoluminescence
  • Semiconductor materials and devices
  • Semiconductor materials and devices
  • Magnetic and transport properties of perovskites and related materials
  • Thin-Film Transistor Technologies
  • Thin-Film Transistor Technologies
  • Magnetic and transport properties of perovskites and related materials
  • Carbon Nanotubes in Composites
  • Carbon Nanotubes in Composites
  • Acoustic Wave Resonator Technologies
  • Semiconductor Quantum Structures and Devices
  • Acoustic Wave Resonator Technologies
  • Semiconductor Quantum Structures and Devices
  • ZnO doping and properties
  • Advanced Semiconductor Detectors and Materials
  • ZnO doping and properties
  • Advanced Semiconductor Detectors and Materials
  • Material Properties and Applications
  • Chalcogenide Semiconductor Thin Films
  • Material Properties and Applications
  • Chalcogenide Semiconductor Thin Films
  • Magnetic Properties and Synthesis of Ferrites
  • GaN-based semiconductor devices and materials
  • GaN-based semiconductor devices and materials
  • Magnetic Properties and Synthesis of Ferrites
  • Luminescence Properties of Advanced Materials
  • Advanced Condensed Matter Physics
  • Photorefractive and Nonlinear Optics
  • Luminescence Properties of Advanced Materials
  • Advanced Condensed Matter Physics
  • Photorefractive and Nonlinear Optics
  • Graphene research and applications
  • Graphene research and applications
  • Solidification and crystal growth phenomena
  • Advanced Memory and Neural Computing
  • Quantum and electron transport phenomena
  • Quantum and electron transport phenomena
  • Advanced Memory and Neural Computing
  • Solidification and crystal growth phenomena
  • Aluminum Alloy Microstructure Properties
  • Aluminum Alloy Microstructure Properties

Keywords (DOAJ)

  • structure and properties of boundary surfaces
  • non-thermal activation methods of physical processes
  • quantum-sized structures and nanocrystals
  • material science of single crystal semiconductors
  • diele

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The journal's record in other sources:Web of Science MJLDOAJ

Everything shown here is produced automatically from named sources (DOAJ, OpenAlex, Crossref, PubMed, the Norwegian register) as of its capture date, with no human editing. Facts appear as recorded at the source; derived scores (PCI, PTD, PublishLens score) follow a published methodology. Not a judgement on the journal, not an official accreditation, not advice.

Wrong items are corrected automatically by re-reading the source (24 h for daily sources, 7 days for weekly ones) with a dated change log, and each item links to its source record. PublishLens-derived assessments are contested through the appeals mechanism (15 working days). Appeals · Indicator guide

Norwegian register data: Kanalregisteret (HK-dir, Norway) — CC BY 4.0 / NLOD — adapted: level extracted per year · OASPA member list — CC BY

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