Moldavian Journal of the Physical Sciences

D.Ghitu Institute of Electronic Engineering and Nanotechnologies

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About the journal

Moldavian Journal of the Physical Sciences is an open-access journal published by D.Ghitu Institute of Electronic Engineering and Nanotechnologies in Moldova, publishing in english. It is listed in DOAJ according to the sources read. Declared review time at DOAJ: 25 weeks. Facts are reproduced as recorded at their sources with their capture dates; PublishLens indicators are available after sign-in.

Basic facts

Publisher
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
ISSN
1810-648X · 2537-6365
Country
Moldova
Languages
english
Access
Open access
Articles in DOAJ
639
Declared review time
25 weeks
Declared peer-review model
peer_review
Official website
http://mjps.nanotech.md

Index listings

  • DOAJ · 2021-10-20
Indexing
DOAJ
APC
—
Declared review time (DOAJ)
25 weeks — journal-declared only (not measured)
Activity (OpenAlex)
Active — latest works 2023
PublishLens list status
Shown after sign-in
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Methodology signals (dated facts from their sources)

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Journal profile

Descriptive metadata from public sources (DOAJ, OpenAlex, PubMed) as of the capture date shown — contains no assessment or judgment.

Articles in DOAJ

639

Most recent article

5 years ago

Average review time (journal-declared via DOAJ)

25weeks

Works in OpenAlex

74

Last recorded publication year

2023

Reported by OpenAlex in 1 of 3 sources (CC0 flags, not verified indexing)DOAJSciELOOpenAlex Core

h-index

3

i10-index

1

From OpenAlex open data (CC0).

Editorial & policy8
Last DOAJ review date
2021-10-20
Added to DOAJ
2021-10-20
Declared plagiarism screening
Declared
Other fees beyond APC
No
Editorial board
Official page ↗
Open references deposited at Crossref
0%
ORCID iDs in current deposits
0%
Peer-review policy
View policy
Identity & continuity1
Source type
journal
Classification4

Subjects (DOAJ)

Science: PhysicsTechnology: Electrical engineering. Electronics. Nuclear engineering: Electronics

LCC codes

QC1-999TK7800-8360

Subject areas

  • ZnO doping and properties
  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films
  • Chalcogenide Semiconductor Thin Films
  • Physics of Superconductivity and Magnetism
  • Physics of Superconductivity and Magnetism
  • Solid-state spectroscopy and crystallography
  • Quantum Dots Synthesis And Properties
Show all subjects (50)
  • Ga2O3 and related materials
  • Ga2O3 and related materials
  • Solid-state spectroscopy and crystallography
  • Quantum Dots Synthesis And Properties
  • Quantum, superfluid, helium dynamics
  • Phase-change materials and chalcogenides
  • Quantum, superfluid, helium dynamics
  • Luminescence Properties of Advanced Materials
  • Phase-change materials and chalcogenides
  • Semiconductor Quantum Structures and Devices
  • Topological Materials and Phenomena
  • Topological Materials and Phenomena
  • Semiconductor Quantum Structures and Devices
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Semiconductor Detectors and Materials
  • Gas Sensing Nanomaterials and Sensors
  • Luminescence Properties of Advanced Materials
  • Advanced Semiconductor Detectors and Materials
  • Photonic Crystals and Applications
  • Photonic Crystals and Applications
  • Transition Metal Oxide Nanomaterials
  • Metallic Glasses and Amorphous Alloys
  • Advanced Thermoelectric Materials and Devices
  • Glass properties and applications
  • Transition Metal Oxide Nanomaterials
  • Semiconductor materials and interfaces
  • GaN-based semiconductor devices and materials
  • Quantum and electron transport phenomena
  • Quantum Mechanics and Applications
  • Radiation Detection and Scintillator Technologies
  • Advanced Thermodynamics and Statistical Mechanics
  • High-pressure geophysics and materials
  • Metallic Glasses and Amorphous Alloys
  • Glass properties and applications
  • High-pressure geophysics and materials
  • Advanced Thermoelectric Materials and Devices
  • Semiconductor materials and interfaces
  • Advanced Thermodynamics and Statistical Mechanics
  • Quantum Mechanics and Applications
  • Quantum and electron transport phenomena
  • GaN-based semiconductor devices and materials
  • Radiation Detection and Scintillator Technologies

Keywords (DOAJ)

  • physics
  • electronics
  • technology
  • engineering
  • device physics

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The journal's record in other sources:Web of Science MJLDOAJ

Everything shown here is produced automatically from named sources (DOAJ, OpenAlex, Crossref, PubMed, the Norwegian register) as of its capture date, with no human editing. Facts appear as recorded at the source; derived scores (PCI, PTD, PublishLens score) follow a published methodology. Not a judgement on the journal, not an official accreditation, not advice.

Wrong items are corrected automatically by re-reading the source (24 h for daily sources, 7 days for weekly ones) with a dated change log, and each item links to its source record. PublishLens-derived assessments are contested through the appeals mechanism (15 working days). Appeals · Indicator guide

Norwegian register data: Kanalregisteret (HK-dir, Norway) — CC BY 4.0 / NLOD — adapted: level extracted per year · OASPA member list — CC BY

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