About the journal
IEEE Journal of the Electron Devices Society is an open-access journal published by IEEE in United States, publishing in english. It is listed in DOAJ according to the sources read. Declared publication charge: 1,350 USD. Declared review time at DOAJ: 9 weeks. Facts are reproduced as recorded at their sources with their capture dates; PublishLens indicators are available after sign-in.
Basic facts
- Publisher
- IEEE
- ISSN
- 2168-6734
- Country
- United States
- Languages
- english
- Access
- Open access
- Declared publication charge
- 1,350 USD
- Articles in DOAJ
- 1723
- Declared review time
- 9 weeks
- Declared peer-review model
- peer_review
- Official website
- https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494
Index listings
- DOAJ · 2014-10-23
- Indexing
- DOAJ
- APC
- 1,350 USD
- Declared review time (DOAJ)
- 9 weeks — journal-declared only (not measured)
- Activity (OpenAlex)
- Active — latest works 2026
- PublishLens list status
- Shown after sign-in
- Counts for promotion at your university?
- Choose your university and rank below ↓
Methodology signals (dated facts from their sources)
Details of the evaluation under the published methodology are shown to signed-in users (free).
Create a free account to view the evaluationJournal profile
Descriptive metadata from public sources (DOAJ, OpenAlex, PubMed) as of the capture date shown — contains no assessment or judgment.
Articles in DOAJ
1723
Most recent article
last month
Average review time (journal-declared via DOAJ)
9weeks
Works in OpenAlex
1951
Last recorded publication year
2026
h-index
64
i10-index
754
From OpenAlex open data (CC0).
Editorial & policy13
- Last DOAJ review date
- 2026-03-12
- Added to DOAJ
- 2014-10-23
- Declared plagiarism screening
- Declared
- Other fees beyond APC
- No
- Declared digital preservation
- PorticoScholars Portal
- Observed digital preservation (Keepers registry)— snapshot 2026-10-05
- Portico
- Editorial board
- Official page ↗
- Norwegian register (HK-dir)— 2026
- Level 1 — approved scholarly channel
- Open references deposited at Crossref
- 87%
- ORCID iDs in current deposits
- 95%
- Enrolled in Crossref Similarity Check
- ✓
- Deposits licence metadata at Crossref
- ✓
- APC waiver policy
- View policy
- Peer-review policy
- View policy
Identity & continuity2
- Alternate titles
- Electron Devices Society, IEEE journalInstitute of Electrical and Electronics Engineers journal of the Electron Devices SocietyJ-EDS
- Source type
- journal
Classification2
Subjects (DOAJ)
LCC codes
Subject areas
- Semiconductor materials and devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Silicon Carbide Semiconductor Technologies
Show all subjects (50)
- Thin-Film Transistor Technologies
- Thin-Film Transistor Technologies
- GaN-based semiconductor devices and materials
- GaN-based semiconductor devices and materials
- Advanced Memory and Neural Computing
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Ga2O3 and related materials
- CCD and CMOS Imaging Sensors
- CCD and CMOS Imaging Sensors
- ZnO doping and properties
- ZnO doping and properties
- Radio Frequency Integrated Circuit Design
- Radio Frequency Integrated Circuit Design
- Electrostatic Discharge in Electronics
- Electrostatic Discharge in Electronics
- Energy Harvesting in Wireless Networks
- Energy Harvesting in Wireless Networks
- Silicon and Solar Cell Technologies
- Silicon and Solar Cell Technologies
- MXene and MAX Phase Materials
- MXene and MAX Phase Materials
- Electromagnetic Compatibility and Noise Suppression
- Electromagnetic Compatibility and Noise Suppression
- Photonic and Optical Devices
- Photonic and Optical Devices
- Neuroscience and Neural Engineering
- Neuroscience and Neural Engineering
- Wireless Body Area Networks
- Wireless Body Area Networks
- Bluetooth and Wireless Communication Technologies
- Bluetooth and Wireless Communication Technologies
- Advanced Research in Systems and Signal Processing
- 2D Materials and Applications
Keywords (DOAJ)
- field effect transistors
- logic gates
- integrated circuit devices
- display technologies
- wearable devices
Community confirmations — what users saw in MJL or Scopus Sources; not platform verification and never part of any score.
The journal's record in other sources:Web of Science MJLDOAJ